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Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate memory

Authors
Ji, YongsungKim, JuhanCha, An-NaLee, Sang-ALee, Myung WooSuh, Jung SangBae, SukangMoon, Byung JoonLee, Sang HyunLee, Dong SuWang, GunukKim, Tae-Wook
Issue Date
8-4월-2016
Publisher
IOP PUBLISHING LTD
Keywords
graphene; quantum dots; organic transistors; memory
Citation
NANOTECHNOLOGY, v.27, no.14
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
27
Number
14
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/88930
DOI
10.1088/0957-4484/27/14/145204
ISSN
0957-4484
Abstract
A highly efficient solution-processible charge trapping medium is a prerequisite to developing high-performance organic nano-floating gate memory (NFGM) devices. Although several candidates for the charge trapping layer have been proposed for organic memory, a method for significantly increasing the density of stored charges in nanoscale layers remains a considerable challenge. Here, solution-processible graphene quantum dots (GQDs) were prepared by a modified thermal plasma jet method; the GQDs were mostly composed of carbon without any serious oxidation, which was confirmed by x-ray photoelectron spectroscopy. These GQDs have multiple energy levels because of their size distribution, and they can be effectively utilized as charge trapping media for organic NFGM applications. The NFGM device exhibited excellent reversible switching characteristics, with an on/off current ratio greater than 106, a stable retention time of 10(4) s and reliable cycling endurance over 100 cycles. In particular, we estimated that the GQDs layer trapped similar to 7.2 x 10(12) cm(-2) charges per unit area, which is a much higher density than those of other solution-processible nanomaterials, suggesting that the GQDs layer holds promise as a highly efficient nanoscale charge trapping material.
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Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles

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