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All-electric spin transistor using perpendicular spins

Authors
Kim, Ji HoonBae, JoohyungMin, Byoung-ChulKim, Hyung-junChang, JoonyeonKoo, Hyun Cheol
Issue Date
1-4월-2016
Publisher
ELSEVIER SCIENCE BV
Keywords
Spin transistor; Perpendicular spin; Interface resistance; Schottky tunnel barrier
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.403, pp.77 - 80
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume
403
Start Page
77
End Page
80
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/88959
DOI
10.1016/j.jmmm.2015.11.056
ISSN
0304-8853
Abstract
All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 m Omega is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 m Omega at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system. (C) 2015 Elsevier B.V. All rights reserved.
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