Low-voltage organic transistors and inverters using HfOx dielectrics
- Authors
- Oh, Jeong-Do; Kim, Jang-Woon; Kim, Dae-Kyu; Choi, Jong-Ho
- Issue Date
- 3월-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Organic field-effect transistors (OFETs); HfOx dielectrics; Cyclic olefin copolymer (COC); Complementary metal oxide semiconductor (CMOS) inverters
- Citation
- ORGANIC ELECTRONICS, v.30, pp.131 - 135
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 30
- Start Page
- 131
- End Page
- 135
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89295
- DOI
- 10.1016/j.orgel.2015.12.006
- ISSN
- 1566-1199
- Abstract
- Based on the p-type pentacene and n-type N,N1-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), low-voltage organic field-effect transistors (OFETs) and inverters using hafnium (Hf)-based dielectrics were produced and characterized. All the pristine and cyclic olefin copolymer (COC)-passivated HfOx gate dielectrics were deposited by the solution-processed sol-gel chemistry, and organic thin films were deposited on the dielectrics by the neutral cluster beam deposition method. In comparison to the pristine HfOx-based OFETs, the COC-passivated transistors showed better device performance: higher hole and electron mobilities, reduced hysteresis, decreased trap densities, and particularly improved operational stability of n-type transistors. The inverters composed of the optimized p-and n-type OFETs with the asymmetric Au and LiF/Al electrodes using COC-passivated HfOx dielectrics exhibited high gains and good noise margins under ambient conditions. (C) 2015 Elsevier B.V. All rights reserved.
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