Fundamental understanding, impact, and removal of boron-rich layer on n-type silicon solar cells
DC Field | Value | Language |
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dc.contributor.author | Ryu, Kyungsun | - |
dc.contributor.author | Choi, Chel-Jong | - |
dc.contributor.author | Park, Hyomin | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Rohatgi, Ajeet | - |
dc.contributor.author | Ok, Young -Woo | - |
dc.date.accessioned | 2021-09-04T02:20:36Z | - |
dc.date.available | 2021-09-04T02:20:36Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89438 | - |
dc.description.abstract | Most boron diffusion technologies result in the formation of an undesirable boron-rich layer (BRL) on the emitter surface. This paper reports on a study of the impact of gradual etching of the BRL on n-type silicon solar cell performance. It is found that gradual removal of the BRL improves surface passivation and bulk lifetime in the finished cell, while over-etching of the BRL results in a sharp decrease in fill factor due to the increased n-factor and series resistance. It is shown that the optimum chemical etching of the BRL formed as a byproduct of the screen-printed boron emitter diffusion used in this study raised the cell efficiency by similar to 0.5%, resulting in 20.0% efficient large area (239 cm(2)) n-type solar cells. The change in BRL thickness and morphology as a function of chemical etching time was investigated by TEM and AES measurements to explain the quantitative impact of BRL removal on cell performance. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | MULTICRYSTALLINE SILICON | - |
dc.subject | P-TYPE | - |
dc.title | Fundamental understanding, impact, and removal of boron-rich layer on n-type silicon solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.solmat.2015.11.031 | - |
dc.identifier.scopusid | 2-s2.0-84949008523 | - |
dc.identifier.wosid | 000368745600008 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.146, pp.58 - 62 | - |
dc.relation.isPartOf | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 146 | - |
dc.citation.startPage | 58 | - |
dc.citation.endPage | 62 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MULTICRYSTALLINE SILICON | - |
dc.subject.keywordPlus | P-TYPE | - |
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