III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation
- Authors
- Hur, Ji-Hyun; Jeon, Sanghun
- Issue Date
- 25-2월-2016
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89472
- DOI
- 10.1038/srep22001
- ISSN
- 2045-2322
- Abstract
- As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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