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Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

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dc.contributor.authorKim, Jun Ho-
dc.contributor.authorKim, Da-Som-
dc.contributor.authorKim, Sun-Kyung-
dc.contributor.authorYoo, Young-Zo-
dc.contributor.authorLee, Jeong Hwan-
dc.contributor.authorKim, Sang-Woo-
dc.contributor.authorSeong, Tae-Yeon-
dc.date.accessioned2021-09-04T03:16:37Z-
dc.date.available2021-09-04T03:16:37Z-
dc.date.created2021-06-16-
dc.date.issued2016-02-01-
dc.identifier.issn0272-8842-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/89571-
dc.description.abstractWe investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84 x 10(21) to 9.66 x 10(21) cm(-3), while the sheet resistance decreased from 10.15 to 3.47 Omega sq(-1). The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9 x 10(-3) Omega(-1)). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/ Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCI LTD-
dc.subjectINDIUM-TIN-OXIDE-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectSOLAR-CELL APPLICATION-
dc.subjectTRANSPARENT ELECTRODES-
dc.subjectTHIN-FILMS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectMETAL-
dc.subjectAG-
dc.subjectRESISTANCE-
dc.subjectCONSTANTS-
dc.titleHighly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature-
dc.typeArticle-
dc.contributor.affiliatedAuthorSeong, Tae-Yeon-
dc.identifier.doi10.1016/j.ceramint.2015.10.146-
dc.identifier.scopusid2-s2.0-84948980910-
dc.identifier.wosid000367277100066-
dc.identifier.bibliographicCitationCERAMICS INTERNATIONAL, v.42, no.2, pp.3473 - 3478-
dc.relation.isPartOfCERAMICS INTERNATIONAL-
dc.citation.titleCERAMICS INTERNATIONAL-
dc.citation.volume42-
dc.citation.number2-
dc.citation.startPage3473-
dc.citation.endPage3478-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.subject.keywordPlusINDIUM-TIN-OXIDE-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusSOLAR-CELL APPLICATION-
dc.subject.keywordPlusTRANSPARENT ELECTRODES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusAG-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusCONSTANTS-
dc.subject.keywordAuthorAl-doped ZnO-
dc.subject.keywordAuthorAg-
dc.subject.keywordAuthorTransparent conducting electrode-
dc.subject.keywordAuthorFlexible device-
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공과대학 (신소재공학부)
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