Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature
DC Field | Value | Language |
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dc.contributor.author | Kim, Jun Ho | - |
dc.contributor.author | Kim, Da-Som | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Yoo, Young-Zo | - |
dc.contributor.author | Lee, Jeong Hwan | - |
dc.contributor.author | Kim, Sang-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T03:16:37Z | - |
dc.date.available | 2021-09-04T03:16:37Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-02-01 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89571 | - |
dc.description.abstract | We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84 x 10(21) to 9.66 x 10(21) cm(-3), while the sheet resistance decreased from 10.15 to 3.47 Omega sq(-1). The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9 x 10(-3) Omega(-1)). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/ Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | INDIUM-TIN-OXIDE | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | SOLAR-CELL APPLICATION | - |
dc.subject | TRANSPARENT ELECTRODES | - |
dc.subject | THIN-FILMS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | METAL | - |
dc.subject | AG | - |
dc.subject | RESISTANCE | - |
dc.subject | CONSTANTS | - |
dc.title | Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.ceramint.2015.10.146 | - |
dc.identifier.scopusid | 2-s2.0-84948980910 | - |
dc.identifier.wosid | 000367277100066 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.42, no.2, pp.3473 - 3478 | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 42 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 3473 | - |
dc.citation.endPage | 3478 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | INDIUM-TIN-OXIDE | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SOLAR-CELL APPLICATION | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | CONSTANTS | - |
dc.subject.keywordAuthor | Al-doped ZnO | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | Transparent conducting electrode | - |
dc.subject.keywordAuthor | Flexible device | - |
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