Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
- Authors
- Ji, Yongsung; Cha, An-Na; Lee, Sang-A; Bae, Sukang; Lee, Sang Hyun; Lee, Dong Su; Choi, Hyejung; Wang, Gunuk; Kim, Tae-Wook
- Issue Date
- 2월-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Nonvolatile memory; Organic resistive memory; One transistor-one resistor architecture
- Citation
- ORGANIC ELECTRONICS, v.29, pp.66 - 71
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 29
- Start Page
- 66
- End Page
- 71
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89675
- DOI
- 10.1016/j.orgel.2015.11.020
- ISSN
- 1566-1199
- Abstract
- Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code. (C) 2015 Elsevier B.V. All rights reserved.
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Collections - Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles
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