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Spectroscopic ellipsometry investigation on the excimer laser annealed indium thin oxide sol-gel films

Authors
Noh, MiruSeo, IlwanPark, JunghyunChung, J. -S.Lee, Y. S.Kim, Hyuk JinChang, Young JunPark, J. -H.Kang, Min GyuKang, Chong Yun
Issue Date
2월-2016
Publisher
ELSEVIER SCIENCE BV
Keywords
Indium tin oxide; Excimer laser annealing; Spectroscopic ellipsometry; Sol-gel
Citation
CURRENT APPLIED PHYSICS, v.16, no.2, pp.145 - 149
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
16
Number
2
Start Page
145
End Page
149
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/89719
DOI
10.1016/j.cap.2015.11.007
ISSN
1567-1739
Abstract
We report on the effect of the excimer laser annealing on the electronic properties of indium tin oxide (ITO) sol-gel films by using spectroscopic ellipsometric technique. We found that the excimer laser annealing effectively induces the crystallization as well as condensation of the sol-gel film. As the laser power increased, the carrier concentration and the relaxation time of photo-annealed films increased, with the bandgap shifting to higher energies. Simultaneously, the extinction coefficient values in the visible region were reduced significantly. We suggest that the excimer laser annealing should be a promising method for low temperature preparation of the ITO film on heat-sensitive substrates via the sol-gel process. (C) 2015 Elsevier B.V. All rights reserved.
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