Electrical and Optical Damage to GaN-Based Light-Emitting Diodes by 20-MeV Proton Irradiation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Gwangseok | - |
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-04T04:18:17Z | - |
dc.date.available | 2021-09-04T04:18:17Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89878 | - |
dc.description.abstract | We report the effects of 20-MeV proton irradiation with various fluences (1 x 10(13) and 5 x 10(13) cm(-2)) on GaN-based blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | GALLIUM NITRIDE | - |
dc.subject | RADIATION-DAMAGE | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | DEVICES | - |
dc.title | Electrical and Optical Damage to GaN-Based Light-Emitting Diodes by 20-MeV Proton Irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1166/sam.2016.2621 | - |
dc.identifier.scopusid | 2-s2.0-84964770359 | - |
dc.identifier.wosid | 000372477600030 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.8, no.1, pp.160 - 163 | - |
dc.relation.isPartOf | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 160 | - |
dc.citation.endPage | 163 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | RADIATION-DAMAGE | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Light-Emitting Diodes | - |
dc.subject.keywordAuthor | Proton Irradiation | - |
dc.subject.keywordAuthor | Light Intensity-Current Voltage Characteristics | - |
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