Acoustic Emission Characterization of Hydrogen-Induced Exfoliation of Silicon
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jaewoo | - |
dc.contributor.author | Lee, Changbum | - |
dc.contributor.author | Song, Hee-Eun | - |
dc.contributor.author | Jang, Bo-Yun | - |
dc.contributor.author | Yoon, Wooyoung | - |
dc.date.accessioned | 2021-09-04T04:29:41Z | - |
dc.date.available | 2021-09-04T04:29:41Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89943 | - |
dc.description.abstract | Exfoliation of a thin silicon layer after hydrogen implantation was investigated as a potential step of a kerf-free wafer production process. Samples of p-type silicon were implanted with high doses of hydrogen ions at 2 MeV, and subsequently annealed at 500-800 degrees C. The concentration profile of hydrogen ions implanted in silicon was simulated by using the stopping and range of ions in matter (SRIM2003) program. The obtained hydrogen depth normal distribution exhibited a narrow peak at similar to 48 mu m, which was in good agreement with the calculated projection range of a 2 MeV hydrogen ion beam. During the annealing, crack nucleation was detected by using the acoustic emission technique. Layer splitting occurred at the projected range of implantation, and was characterized by performing acoustic emission parametric analysis. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | TECHNOLOGY | - |
dc.subject | FOILS | - |
dc.subject | CHIP | - |
dc.title | Acoustic Emission Characterization of Hydrogen-Induced Exfoliation of Silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Wooyoung | - |
dc.identifier.doi | 10.1166/nnl.2016.2119 | - |
dc.identifier.scopusid | 2-s2.0-84988877011 | - |
dc.identifier.wosid | 000378137000012 | - |
dc.identifier.bibliographicCitation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.8, no.1, pp.62 - 65 | - |
dc.relation.isPartOf | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.title | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 62 | - |
dc.citation.endPage | 65 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FOILS | - |
dc.subject.keywordPlus | CHIP | - |
dc.subject.keywordAuthor | Kerf-Free | - |
dc.subject.keywordAuthor | Ion Beam | - |
dc.subject.keywordAuthor | Acoustic Emission | - |
dc.subject.keywordAuthor | Silicon | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.