Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Ihn | - |
dc.contributor.author | Wang, Wei | - |
dc.contributor.author | Hwang, Sun Kak | - |
dc.contributor.author | Cho, Sung Hwan | - |
dc.contributor.author | Kim, Kang Lib | - |
dc.contributor.author | Jeong, Beomjin | - |
dc.contributor.author | Huh, June | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2021-09-04T05:02:59Z | - |
dc.date.available | 2021-09-04T05:02:59Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/90165 | - |
dc.description.abstract | The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable nonvolatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 degrees C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 10(4), a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | FIELD-EFFECT-TRANSISTOR | - |
dc.subject | MOLECULAR-DYNAMICS | - |
dc.subject | MULTIBIT STORAGE | - |
dc.subject | POLYMER MEMORY | - |
dc.title | Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Huh, June | - |
dc.identifier.doi | 10.1039/c6nr00505e | - |
dc.identifier.scopusid | 2-s2.0-84971327854 | - |
dc.identifier.wosid | 000376047200040 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.8, no.19, pp.10273 - 10281 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 8 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 10273 | - |
dc.citation.endPage | 10281 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT-TRANSISTOR | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS | - |
dc.subject.keywordPlus | MULTIBIT STORAGE | - |
dc.subject.keywordPlus | POLYMER MEMORY | - |
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