Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement
DC Field | Value | Language |
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dc.contributor.author | Lee, Geonyeop | - |
dc.contributor.author | Lee, Jong-Young | - |
dc.contributor.author | Lee, Gwan-Hyoung | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-04T05:24:29Z | - |
dc.date.available | 2021-09-04T05:24:29Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/90333 | - |
dc.description.abstract | Layer-by-layer thinning without structural damage is essential for integrating two-dimensional materials (such as black phosphorus (BP)) in nanoelectronics, because their properties are primarily thickness-dependent. Unfortunately, most known etching processes for black phosphorus carry the possibility of structural degradation due to ion bombardment and thermal attack. In this study, we report a mild chemical thinning method free from causing physical damage, performed by modifying the sample configuration in a conventional reactive ion etching system. The thickness of mechanically exfoliated BP flakes can be easily controlled by modified plasma treatment, and these flakes maintain perfect crystallinity. Field-effect transistors based on thickness-controlled BP showed improved device performance after ion bombardment-free plasma etching. Our work provides a new way to realize the full potential of BP-based electronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | MOS2 | - |
dc.subject | PASSIVATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | NANOSHEETS | - |
dc.subject | GRAPHENE | - |
dc.title | Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c6tc01514j | - |
dc.identifier.scopusid | 2-s2.0-84977111826 | - |
dc.identifier.wosid | 000379492900007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.26, pp.6234 - 6239 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 4 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 6234 | - |
dc.citation.endPage | 6239 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | GRAPHENE | - |
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