Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2 lenses
DC Field | Value | Language |
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dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Kim, Da-Som | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Song, Kiyoung | - |
dc.contributor.author | Jung, Myunghoon | - |
dc.contributor.author | Jeong, Hwanhee | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T05:27:37Z | - |
dc.date.available | 2021-09-04T05:27:37Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 1478-6435 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/90358 | - |
dc.description.abstract | In this study, we investigated the effect of SiO2 lenses on the output power of InGaN/GaN-based vertical light-emitting diodes (VLEDs; wavelength=445nm) and compared the results to those of reference VLEDs without the SiO2 lenses (planar samples). Arrays of SiO2 lenses (pitch=3m, width=2.5m, height=1.0m) were formed on c-plane sapphire substrates. The external quantum efficiency (EQE) of the packaged VLEDs with planar and patterned substrates was characterised. At 5mA, the EQE of the patterned samples was 150% higher than that of the planar samples. A patterned, N-polar, n-GaN sample contained far fewer nanopipes (approximately 2.2 x 10(5)cm(-2)) than a planar n-GaN sample (approximately 2.4 x 10(6)cm(-2)). Furthermore, the patterned samples contained far fewer threading dislocations (approximately 1.0 x 10(8)cm(-2)) than the planar samples (approximately 5.0 x 10(8)cm(-2)). Scanning electron microscopy (SEM) images showed that the photoelectrochemical (PEC)-etched patterned samples contained cones that were 150% larger than that of the PEC-etched planar samples. In addition, SEM images, cathode luminescence measurements and finite-difference time-domain simulations were used to characterise the improved light output of the patterned samples. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | LASER LIFT-OFF | - |
dc.subject | CURRENT INJECTION | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | V-DEFECTS | - |
dc.subject | GAN | - |
dc.subject | EFFICIENCY | - |
dc.subject | ENHANCEMENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | FABRICATION | - |
dc.title | Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2 lenses | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1080/14786435.2016.1219784 | - |
dc.identifier.scopusid | 2-s2.0-84981203360 | - |
dc.identifier.wosid | 000383570900006 | - |
dc.identifier.bibliographicCitation | PHILOSOPHICAL MAGAZINE, v.96, no.27, pp.2919 - 2929 | - |
dc.relation.isPartOf | PHILOSOPHICAL MAGAZINE | - |
dc.citation.title | PHILOSOPHICAL MAGAZINE | - |
dc.citation.volume | 96 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 2919 | - |
dc.citation.endPage | 2929 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | CURRENT INJECTION | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | V-DEFECTS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | light emitting diode | - |
dc.subject.keywordAuthor | line defects | - |
dc.subject.keywordAuthor | patterned substrate | - |
dc.subject.keywordAuthor | external quantum efficiency | - |
dc.subject.keywordAuthor | structural analysis | - |
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