Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor
DC Field | Value | Language |
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dc.contributor.author | Nam, Yunyong | - |
dc.contributor.author | Kim, Hee-Ok | - |
dc.contributor.author | Cho, Sung Haeng | - |
dc.contributor.author | Hwang, Chi-Sun | - |
dc.contributor.author | Kim, Taeho | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Park, Sang-Hee Ko | - |
dc.date.accessioned | 2021-09-04T05:28:32Z | - |
dc.date.available | 2021-09-04T05:28:32Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 1598-0316 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/90365 | - |
dc.description.abstract | Described herein is the role of hydrogen in aluminum oxide (Al2O3) gate dielectrics in amorphous indium-gallium-zinc oxide (a-InGaZnO or a-IGZO) thin-film transistors (TFTs). Compared to a-IGZO TFTs with a low-temperature (150 degrees C) Al2O3 gate dielectric, a-IGZO devices with a high-temperature (250-300 degrees C) Al2O3 gate dielectric exhibit poor transistor characteristics, such as low mobility, a high subthreshold slope, and huge hysteresis. Through DC and short-pulsed current-voltage (I-V) measurements, it was revealed that the degradation of the transistor performance stems from the charging and discharging phenomenon at the interface traps located in the interface between the a-IGZO semiconductor and the Al2O3 gate insulator. It was found that the low-temperature Al2O3 atomic layer deposition processed film contains a higher density of hydrogen atoms compared to high-deposition-temperature films. The study results show that a high concentration of hydrogen atoms can passivate the defect sites in the interface and bulk, which produces excellent transistor characteristics. This study demonstrated that hydrogen has a beneficial effect on the defect passivation for oxide TFTs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | ORIGINS | - |
dc.title | Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1080/15980316.2016.1160003 | - |
dc.identifier.scopusid | 2-s2.0-84963520633 | - |
dc.identifier.wosid | 000378234900004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF INFORMATION DISPLAY, v.17, no.2, pp.65 - 71 | - |
dc.relation.isPartOf | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.title | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.volume | 17 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 65 | - |
dc.citation.endPage | 71 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002118598 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | ORIGINS | - |
dc.subject.keywordAuthor | Oxide thin-film transistor | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | aluminum oxide gate dielectric | - |
dc.subject.keywordAuthor | hydrogen effect | - |
dc.subject.keywordAuthor | IGZO | - |
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