A review: Comparison of fabrication and characteristics of flexible reram and multi-insulating graphene oxide layer reram

Abstract

A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices. Copyright © The Korean Institute of Electrical Engineers.