Formation of low resistance Ti/Al-based ohmic contacts on (11-22) semipolar n-type GaN
DC Field | Value | Language |
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dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Han, Jaecheon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T09:16:53Z | - |
dc.date.available | 2021-09-04T09:16:53Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-12-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91571 | - |
dc.description.abstract | The electrical properties of Ti/Al-based ohmic contacts to (0001) c-plane and (11-22) semipolar n-type GaN were investigated as a function of annealing temperature. The electrical properties of both c-plane Ti/Al/Au and semi-polar Ti/(Ta)/Al/Au contacts became improved upon annealing at 600 degrees C for 1 min. The specific contact resistances of the 600 degrees C-annealed c-plane Ti/Al/Au, semi-polar Ti/Al/Au, and semipolar Ti/Ta/Al/Au contacts were 3.2 x 10(-4), 1.5 x 10(-4), and 4.8 x 10(-5) Omega cm(2), respectively. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the c-plane samples experienced a smaller shift toward the conduction band than that for the semipolar samples. The XPS depth profile results exhibited that the semipolar samples contained more interfacial oxygen than the c-plane samples. Oxygen was present in the form of Al-oxide at the interface region, but as oxygen atoms in the GaN surface region. On the basis of the electrical and XPS results, the annealing-induced improvement of the electrical properties was described in terms of the formation of donor-like defects. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | P-TYPE GAN | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | IMPURITY INCORPORATION | - |
dc.subject | PIEZOELECTRIC FIELDS | - |
dc.subject | FILMS | - |
dc.subject | OXYGEN | - |
dc.subject | FACE | - |
dc.subject | OVERLAYER | - |
dc.title | Formation of low resistance Ti/Al-based ohmic contacts on (11-22) semipolar n-type GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.jallcom.2015.08.181 | - |
dc.identifier.scopusid | 2-s2.0-84941091273 | - |
dc.identifier.wosid | 000362184100023 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.652, pp.167 - 171 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 652 | - |
dc.citation.startPage | 167 | - |
dc.citation.endPage | 171 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | IMPURITY INCORPORATION | - |
dc.subject.keywordPlus | PIEZOELECTRIC FIELDS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | FACE | - |
dc.subject.keywordPlus | OVERLAYER | - |
dc.subject.keywordAuthor | Semipolar GaN | - |
dc.subject.keywordAuthor | Ohmic contact | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
dc.subject.keywordAuthor | Ti/Al | - |
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