Dislocation scatterings in p-type Si1-xGex under weak electric field
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-04T09:17:47Z | - |
dc.date.available | 2021-09-04T09:17:47Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-12-11 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91578 | - |
dc.description.abstract | We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si1-xGex. The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T-3/2/lambda relation and is proportional to the germanium density x. We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GERMANIUM | - |
dc.subject | MOBILITY | - |
dc.subject | GE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | GAN | - |
dc.title | Dislocation scatterings in p-type Si1-xGex under weak electric field | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1088/0957-4484/26/49/495201 | - |
dc.identifier.scopusid | 2-s2.0-84947976707 | - |
dc.identifier.wosid | 000366715200007 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.49 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.citation.number | 49 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | silicon germanium | - |
dc.subject.keywordAuthor | dislocation | - |
dc.subject.keywordAuthor | epitaxy | - |
dc.subject.keywordAuthor | scattering | - |
dc.subject.keywordAuthor | mobility | - |
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