Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells
- Authors
- Lee, Ji Eun; Ahn, Seung Kyu; Park, Joo Hyung; Yoo, Jinsu; Yoon, Kyung Hoon; Kim, Donghwan; Cho, Jun-Sik
- Issue Date
- 12월-2015
- Publisher
- WILEY
- Keywords
- silicon thin-film; solar cell; silicon carbide; nanocrystallites; conversion efficiency
- Citation
- PROGRESS IN PHOTOVOLTAICS, v.23, no.12, pp.1715 - 1723
- Indexed
- SCIE
SCOPUS
- Journal Title
- PROGRESS IN PHOTOVOLTAICS
- Volume
- 23
- Number
- 12
- Start Page
- 1715
- End Page
- 1723
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/91812
- DOI
- 10.1002/pip.2605
- ISSN
- 1062-7995
- Abstract
- Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H-2 gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC: H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the RH (H-2/SiH4) ratio from 90 to 220, the Si-C bond density in the p-nc-SiC: H films increased from 5.20 x 10(19) to 7.07 x 10(19)/cm(3), resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p-nc-Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3-15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC: H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC: H films deposited at RH = 220 were applied in the nc-Si: H solar cells, a high conversion efficiency of 8.26% (V-oc= 0.53V, J(sc) = 23.98mA/cm(2) and FF = 0.65) was obtained compared to 6.36% (V-oc= 0.44V, J(sc) = 21.90 mA/cm(2) and FF = 0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC: H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright (C) 2015 John Wiley & Sons, Ltd.
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