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Anti-Galvanic Reduction of Silver Ion on Gold and Its Role in Anisotropic Growth of Gold Nanomaterials

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dc.contributor.authorKang, Hosuk-
dc.contributor.authorKim, Bong-Geun-
dc.contributor.authorNa, Hyon Bin-
dc.contributor.authorHwang, Seongpil-
dc.date.accessioned2021-09-04T10:31:33Z-
dc.date.available2021-09-04T10:31:33Z-
dc.date.created2021-06-18-
dc.date.issued2015-11-19-
dc.identifier.issn1932-7447-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/91879-
dc.description.abstractThe role of silver ions in the seed-mediated growth of gold nanostructures has been investigated. Silver submonolayer or monolayer on specific facet of gold is assumed in previously suggested mechanism owing to underpotential deposition (UPD) of silver by ascorbic acid having weak reducing power. Silver overpotential deposition by ascorbic acid, however, is confirmed by electrochemical stripping voltammetry, whereas submonolayer of silver on gold is spontaneously formed by anti-galvanic reduction in the absence of ascorbic acid. In the presence of cetyltrimethylammonium bromide (CTAB), silver overpotential deposition by ascorbic acid does not occur, but submonolayer of silver is formed on gold surface. Adsorption of silver and CTAB on gold dramatically hindered the electron transfer by the oxidation of ascorbic acid on gold, which reduces gold ions to metallic gold in seed-mediated growth. These results provide the evidence to the in-depth observation of mechanism in seed-mediated growth where the blocking effect of CTAB/Ag(submonolayer)/Au for oxidation of reducing agent determine the shape and facet of gold nanomaterials.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectSINGLE-CRYSTAL SURFACES-
dc.subjectHIGH-YIELD SYNTHESIS-
dc.subjectCOLLOIDAL METAL-
dc.subjectSHAPE CONTROL-
dc.subjectNANOPARTICLES-
dc.subjectDEPOSITION-
dc.subjectAU-
dc.subjectAG-
dc.titleAnti-Galvanic Reduction of Silver Ion on Gold and Its Role in Anisotropic Growth of Gold Nanomaterials-
dc.typeArticle-
dc.contributor.affiliatedAuthorHwang, Seongpil-
dc.identifier.doi10.1021/acs.jpcc.5b08216-
dc.identifier.scopusid2-s2.0-84947812643-
dc.identifier.wosid000365463000032-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY C, v.119, no.46, pp.25974 - 25982-
dc.relation.isPartOfJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.volume119-
dc.citation.number46-
dc.citation.startPage25974-
dc.citation.endPage25982-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusSINGLE-CRYSTAL SURFACES-
dc.subject.keywordPlusHIGH-YIELD SYNTHESIS-
dc.subject.keywordPlusCOLLOIDAL METAL-
dc.subject.keywordPlusSHAPE CONTROL-
dc.subject.keywordPlusNANOPARTICLES-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusAU-
dc.subject.keywordPlusAG-
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