De-doping of graphene by Joule heating with water
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Joonkyu | - |
dc.contributor.author | Kim, Dong-Whan | - |
dc.contributor.author | Woo, Ju Yeon | - |
dc.contributor.author | Lee, Jun | - |
dc.contributor.author | Han, Chang-Soo | - |
dc.date.accessioned | 2021-09-04T10:32:15Z | - |
dc.date.available | 2021-09-04T10:32:15Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-11-18 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91884 | - |
dc.description.abstract | We report the restoration of electrical properties found in graphene field-effect transistors (G-FETs) Joule heated with water. Since polymer contaminates the graphene surface during the transfer process and device fabrication, the graphene becomes p-doped so that we can hardly measure its charge neutrality point (CNP) with a gate voltage even up to 100 V. When the p-doped G-FET covered by water is Joule heated, on the other hand, the CNP is restored almost to the zero gate voltage. Based on the results derived from I-d-V-g characteristics and Raman spectroscopy, we argue that the polymers on graphene were removed whilst it was Joule heated, resulting in high de-doping of the graphene, leading to the easy process for the fabrication of high performance G-FET. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | CHARGED-IMPURITY SCATTERING | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | PERFORMANCE | - |
dc.subject | MOBILITY | - |
dc.subject | TRANSPORT | - |
dc.title | De-doping of graphene by Joule heating with water | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Woo, Ju Yeon | - |
dc.contributor.affiliatedAuthor | Han, Chang-Soo | - |
dc.identifier.doi | 10.1088/0022-3727/48/45/455102 | - |
dc.identifier.scopusid | 2-s2.0-84947081101 | - |
dc.identifier.wosid | 000367070000007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.45 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 45 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | CHARGED-IMPURITY SCATTERING | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | water de-doping | - |
dc.subject.keywordAuthor | Joule heating | - |
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