600 GHz InP HBT frequency multiplier
DC Field | Value | Language |
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dc.contributor.author | Choi, S. H. | - |
dc.contributor.author | Urteaga, M. | - |
dc.contributor.author | Kim, M. | - |
dc.date.accessioned | 2021-09-04T10:46:18Z | - |
dc.date.available | 2021-09-04T10:46:18Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2015-11-05 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91927 | - |
dc.description.abstract | A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 mu m InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 mu m finger devices in common-base push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of -8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | 600 GHz InP HBT frequency multiplier | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, M. | - |
dc.identifier.doi | 10.1049/el.2015.2916 | - |
dc.identifier.scopusid | 2-s2.0-84947257319 | - |
dc.identifier.wosid | 000364380100048 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.51, no.23, pp.1928 - 1929 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 1928 | - |
dc.citation.endPage | 1929 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
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