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600 GHz InP HBT frequency multiplier

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dc.contributor.authorChoi, S. H.-
dc.contributor.authorUrteaga, M.-
dc.contributor.authorKim, M.-
dc.date.accessioned2021-09-04T10:46:18Z-
dc.date.available2021-09-04T10:46:18Z-
dc.date.created2021-06-10-
dc.date.issued2015-11-05-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/91927-
dc.description.abstractA 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 mu m InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 mu m finger devices in common-base push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of -8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.title600 GHz InP HBT frequency multiplier-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, M.-
dc.identifier.doi10.1049/el.2015.2916-
dc.identifier.scopusid2-s2.0-84947257319-
dc.identifier.wosid000364380100048-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.51, no.23, pp.1928 - 1929-
dc.relation.isPartOfELECTRONICS LETTERS-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume51-
dc.citation.number23-
dc.citation.startPage1928-
dc.citation.endPage1929-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
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