Bipolar Switching Behavior of ZnO (x) Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures
DC Field | Value | Language |
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dc.contributor.author | Bae, Seonho | - |
dc.contributor.author | Kim, Dae-Sik | - |
dc.contributor.author | Jung, Seojoo | - |
dc.contributor.author | Jeong, Woo Seop | - |
dc.contributor.author | Lee, Jee Eun | - |
dc.contributor.author | Cho, Seunghee | - |
dc.contributor.author | Park, Junsung | - |
dc.contributor.author | Byun, Dongjin | - |
dc.date.accessioned | 2021-09-04T11:01:13Z | - |
dc.date.available | 2021-09-04T11:01:13Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92034 | - |
dc.description.abstract | The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300A degrees C to 500A degrees C in steps of 100A degrees C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300A degrees C, stoichiometric Zn1O1 at 400A degrees C, and oxygen-rich Zn1O1.3 at 500A degrees C. Resistive switching properties were observed in the ZnO films grown at 300A degrees C and 400A degrees C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500A degrees C. The ZnO film grown at 500A degrees C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300A degrees C or 400A degrees C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | NANOWIRE ARRAYS | - |
dc.subject | MECHANISMS | - |
dc.subject | XPS | - |
dc.title | Bipolar Switching Behavior of ZnO (x) Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Byun, Dongjin | - |
dc.identifier.doi | 10.1007/s11664-015-3935-x | - |
dc.identifier.scopusid | 2-s2.0-84942825581 | - |
dc.identifier.wosid | 000361903000013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.44, no.11, pp.4175 - 4181 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4175 | - |
dc.citation.endPage | 4181 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOWIRE ARRAYS | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | bipolar switching behavior | - |
dc.subject.keywordAuthor | metalorganic chemical vapor deposition | - |
dc.subject.keywordAuthor | Rutherford backscattering spectroscopy (RBS) | - |
dc.subject.keywordAuthor | x-ray photoelectron spectroscopy (XPS) | - |
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