Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories
- Authors
- Song, Kyungmi; Lee, Kyung-Jin
- Issue Date
- 7-8월-2015
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.118, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 118
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92771
- DOI
- 10.1063/1.4928205
- ISSN
- 0021-8979
- Abstract
- We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM. (C) 2015 AIP Publishing LLC.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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