Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation
DC Field | Value | Language |
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dc.contributor.author | Kim, Janghyuk | - |
dc.contributor.author | Lee, Geonyeop | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-04T14:13:01Z | - |
dc.date.available | 2021-09-04T14:13:01Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-07-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92997 | - |
dc.description.abstract | We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO2/Si. Carbon ions were bombarded at 20 keV and a dose of 1 x 10(15) cm(-2) onto the surface of the Ni/SiO2/Si substrate at a temperature of 500 degrees C. This was followed by high-temperature activation annealing (600-900 degrees C) to form a sp(2)-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/1.4926605 | - |
dc.identifier.scopusid | 2-s2.0-84937501318 | - |
dc.identifier.wosid | 000358675600051 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.107, no.3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 107 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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