Selective p- and n-Doping of Colloidal PbSe Nanowires To Construct Electronic and Optoelectronic Devices
- Authors
- Oh, Soong Ju; Uswachoke, Chawit; Zhao, Tianshuo; Choi, Ji-Hyuk; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.
- Issue Date
- 7월-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- PbSe; colloidal nanowires; selective doping; pn junction; CMOS inverter; photodiode
- Citation
- ACS NANO, v.9, no.7, pp.7536 - 7544
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 9
- Number
- 7
- Start Page
- 7536
- End Page
- 7544
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93097
- DOI
- 10.1021/acsnano.5b02734
- ISSN
- 1936-0851
- Abstract
- We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
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