Low Surface Recombination Velocity on P-Type Cz-Si Surface by Sol-Gel Deposition of Al2O3 Films for Solar Cell Applications
DC Field | Value | Language |
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dc.contributor.author | Balaji, Nagarajan | - |
dc.contributor.author | Park, Cheolmin | - |
dc.contributor.author | Raja, Jayapal | - |
dc.contributor.author | Ju, Minkyu | - |
dc.contributor.author | Venkatesan, Muthukumarasamy Rangaraju | - |
dc.contributor.author | Lee, Haeseok | - |
dc.contributor.author | Yi, Junsin | - |
dc.date.accessioned | 2021-09-04T14:47:07Z | - |
dc.date.available | 2021-09-04T14:47:07Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93138 | - |
dc.description.abstract | High quality surface passivation has gained a significant importance in photovoltaic industry for fabricating low cost and high efficiency solar cells using thinner and lower cost wafers. The passivation property of spin coated Al2O3 films with a thickness of about 50 nm on p-type Cz Si wafers has been investigated as a function of annealing temperatures. An effective surface recombination velocity of 55 cm/s was obtained for the films annealed at 500 degrees C. The chemical and field effect passivation was analyzed by C V measurements. A high density of negative fixed charges (Q(f)) in the order of 9 x 10(-1) cm(-2) was detected in Al2O3 films and its impact on the level of surface passivation was demonstrated experimentally. The C V curves show density of the interface state (DR) of 1 x 10(12) eV(-1)cm(-2) at annealing temperature of 500 degrees C. During annealing, a thin interfacial SiOx is formed, and this interfacial layer is supposed to play a vital role in the origin of negative Q(f) and D-it. The homogeneous SiOx interlayer result in higher passivation performance due to both the increase of negative Q(f) and the decrease of D-it. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | PASSIVATION | - |
dc.subject | OXIDE | - |
dc.subject | LAYER | - |
dc.title | Low Surface Recombination Velocity on P-Type Cz-Si Surface by Sol-Gel Deposition of Al2O3 Films for Solar Cell Applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Haeseok | - |
dc.identifier.doi | 10.1166/jnn.2015.9851 | - |
dc.identifier.scopusid | 2-s2.0-84920771772 | - |
dc.identifier.wosid | 000348489200054 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.7, pp.5123 - 5128 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 15 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 5123 | - |
dc.citation.endPage | 5128 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | Sol-Gel Al2O3 | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | FTIR | - |
dc.subject.keywordAuthor | Solar Cell | - |
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