Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HoSung | - |
dc.contributor.author | Park, MinSu | - |
dc.contributor.author | Kim, SangHyeon | - |
dc.contributor.author | Kim, SangHyuck | - |
dc.contributor.author | Song, JinDong | - |
dc.contributor.author | Choi, WonJun | - |
dc.contributor.author | Park, JungHo | - |
dc.contributor.author | Lee, YooJong | - |
dc.date.accessioned | 2021-09-04T14:53:28Z | - |
dc.date.available | 2021-09-04T14:53:28Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93186 | - |
dc.description.abstract | The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively. (C) 2015 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | DX CENTERS | - |
dc.subject | GAAS | - |
dc.subject | PASSIVATION | - |
dc.subject | EFFICIENCY | - |
dc.subject | GROWTH | - |
dc.title | Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JungHo | - |
dc.identifier.doi | 10.1116/1.4926630 | - |
dc.identifier.scopusid | 2-s2.0-84937393033 | - |
dc.identifier.wosid | 000358676700016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 33 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | DX CENTERS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | GROWTH | - |
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