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Class of high boost inverters based on switched-inductor structure

Authors
Minh-Khai NguyenTuan-Vu LePark, Sung-JunLim, Young-CheolYoo, Ji-Yoon
Issue Date
5월-2015
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
IET POWER ELECTRONICS, v.8, no.5, pp.750 - 759
Indexed
SCIE
SCOPUS
Journal Title
IET POWER ELECTRONICS
Volume
8
Number
5
Start Page
750
End Page
759
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93653
DOI
10.1049/iet-pel.2014.0471
ISSN
1755-4535
Abstract
This study deals with a class of the switched-inductor boost inverters (SLBIs) including the DC-linked type, continuous, discontinuous and ripple input current topologies. Compared with the conventional switched boost inverters, the SLBIs add only three diodes and one inductor to obtain a strong boost factor. In comparison with the conventional switched-inductor Z-source inverters (ZSIs) for the same voltage gain at the same modulation indexes, the proposed SLBIs use one more active switch and less passive components which results in reducing the size and cost. Moreover, the efficiency of the proposed inverters is improved in comparison with the conventional switched-inductor ZSIs. Analysis and operating principles are presented. A laboratory prototype was built with 24, 36, 48 V DC input and 127 Vrms output voltage to test high boost ability of the proposed inverters.
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