Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Ahn, Shihyun | - |
dc.contributor.author | Hwang, Ya-Hsi | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Zhang, Ming-Lan | - |
dc.date.accessioned | 2021-09-04T16:25:55Z | - |
dc.date.available | 2021-09-04T16:25:55Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93675 | - |
dc.description.abstract | The effects of a thermal annealing process on the dc performance of off-state, drain-voltage stepstressed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. After stress, the reverse bias gate leakage current increased from 7 x 10(-3) to 1.96 x 10(-1) mA/mm and drain current on-off ratio decreased from 1.9 x 10(5) to 4.52 x 10(3). These degradations were completely recovered after a thermal annealing at 450 degrees C for 10 min. Temperature-dependent drain-current subthreshold swing measurements were employed to estimate the trap densities located in the AlGaN barrier layer near-surface region of the HEMTs before and after off-state drain-voltage step-stressing and also following subsequent thermal annealing. Off-state step-stressing produced a significant increase of trap density from 2.15 x 10(12) to 1.63 x 10(13)/cm(2) V. This was reduced to 5.21 x 10(12)/cm(2) V after thermal annealing. These results show that simple thermal annealing can recover much of the degradation caused by step-stressing below the threshold for permanent damage. (C) 2015 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | GATE LEAKAGE | - |
dc.subject | INDUCED DEGRADATION | - |
dc.subject | BREAKDOWN | - |
dc.subject | MECHANISM | - |
dc.subject | HEMTS | - |
dc.title | Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.4916882 | - |
dc.identifier.scopusid | 2-s2.0-84926457706 | - |
dc.identifier.wosid | 000355011700023 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 33 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | GATE LEAKAGE | - |
dc.subject.keywordPlus | INDUCED DEGRADATION | - |
dc.subject.keywordPlus | BREAKDOWN | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | HEMTS | - |
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