Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors
DC Field | Value | Language |
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dc.contributor.author | Park, Youn Ho | - |
dc.contributor.author | Choi, Jun Woo | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Koo, Hyun Cheol | - |
dc.date.accessioned | 2021-09-04T16:51:51Z | - |
dc.date.available | 2021-09-04T16:51:51Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93766 | - |
dc.description.abstract | Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
dc.identifier.doi | 10.1016/j.cap.2015.02.018 | - |
dc.identifier.scopusid | 2-s2.0-84938287639 | - |
dc.identifier.wosid | 000359884300008 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, pp.S32 - S35 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.citation.startPage | S32 | - |
dc.citation.endPage | S35 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Spintronics | - |
dc.subject.keywordAuthor | Rashba effect | - |
dc.subject.keywordAuthor | Spin logic device | - |
dc.subject.keywordAuthor | Spin transistor | - |
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