Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Hwang, Ya-Hsi | - |
dc.contributor.author | Ahn, Shihyun | - |
dc.contributor.author | Zhu, Weidi | - |
dc.contributor.author | Dong, Chen | - |
dc.contributor.author | Lu, Liu | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Holzworth, M. R. | - |
dc.contributor.author | Jones, Kevin S. | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Smith, David J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Zhang, Ming-Lan | - |
dc.date.accessioned | 2021-09-04T17:16:10Z | - |
dc.date.available | 2021-09-04T17:16:10Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-04-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93844 | - |
dc.description.abstract | The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 degrees C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GATE LEAKAGE | - |
dc.title | Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/1.4918530 | - |
dc.identifier.scopusid | 2-s2.0-84928492426 | - |
dc.identifier.wosid | 000353160700044 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.106, no.15 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GATE LEAKAGE | - |
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