Fluorination, and Tunneling across Molecular Junctions
DC Field | Value | Language |
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dc.contributor.author | Liao, Kung-Ching | - |
dc.contributor.author | Bowers, Carleen M. | - |
dc.contributor.author | Yoon, Hyo Jae | - |
dc.contributor.author | Whitesides, George M. | - |
dc.date.accessioned | 2021-09-04T18:03:15Z | - |
dc.date.available | 2021-09-04T18:03:15Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-03-25 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94088 | - |
dc.description.abstract | This paper describes the influence of the substitution of fluorine for hydrogen on the rate of charge transport by hole tunneling through junctions of the form (AgO2C)-O-TS(CH2)(n)(CF2)(m)T//Ga2O3/EGaIn, where T is methyl (CH3) or trifluoromethyl (CF3). Alkanoate-based selfassembled monolayers (SAMs) having perfluorinated groups (R-F) show current densities that are lower (by factors of 20-30) than those of the homologous hydrocarbons (R-H), while the attenuation factors of the simplified Simmons equation for methylene (beta = (1.05 +/- 0.02)n(CH2)(-1)) and difluoromethylene (beta = (1.15 +/- 0.02)(nCF2)(-1)) are similar (although the value for (CF2)(n) is statistically significantly larger). A comparative study focusing on the terminal fluorine substituents in SAMs of omega-tolyl- and -phenyl-alkanoates suggests that the C-F//Ga2O3 interface is responsible for the lower tunneling currents for CF3. The decrease in the rate of charge transport in SAMs with R-F groups (relative to homologous RH groups) is plausibly due to an increase in the height of the tunneling barrier at the T//Ga2O3 interface, and/or to weak van der Waals interactions at that interface. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | SIGNIFICANTLY CHANGE RATES | - |
dc.subject | METAL WORK FUNCTION | - |
dc.subject | CHARGE-TRANSPORT | - |
dc.subject | CONTACT | - |
dc.subject | INTERFACE | - |
dc.subject | GOLD | - |
dc.subject | SAMS | - |
dc.subject | WETTABILITY | - |
dc.subject | RESISTANCE | - |
dc.title | Fluorination, and Tunneling across Molecular Junctions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Hyo Jae | - |
dc.identifier.doi | 10.1021/jacs.5b00137 | - |
dc.identifier.scopusid | 2-s2.0-84925832830 | - |
dc.identifier.wosid | 000351972000026 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.137, no.11, pp.3852 - 3858 | - |
dc.relation.isPartOf | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.volume | 137 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3852 | - |
dc.citation.endPage | 3858 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | SIGNIFICANTLY CHANGE RATES | - |
dc.subject.keywordPlus | METAL WORK FUNCTION | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | GOLD | - |
dc.subject.keywordPlus | SAMS | - |
dc.subject.keywordPlus | WETTABILITY | - |
dc.subject.keywordPlus | RESISTANCE | - |
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