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Realization of highly transparent and low resistance TiO2/Ag/TiO2 conducting electrode for optoelectronic devices

Authors
Kim, Jun HoKim, Dae-HyunSeong, Tae-Yeon
Issue Date
3월-2015
Publisher
ELSEVIER SCI LTD
Keywords
TiO2; Ag; Multi layer; Transparent conducting electrode
Citation
CERAMICS INTERNATIONAL, v.41, no.2, pp.3064 - 3068
Indexed
SCIE
SCOPUS
Journal Title
CERAMICS INTERNATIONAL
Volume
41
Number
2
Start Page
3064
End Page
3068
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/94222
DOI
10.1016/j.ceramint.2014.10.148
ISSN
0272-8842
Abstract
The effect of TiO2 thickness on the optical and electrical properties of TiO2/Ag/TiO2 multilayer films deposited on glass substrates was investigated. The as-deposited TiO2 samples were found to be amorphous. The transmission window became wider and gradually shifted toward lower energies as the TiO2 thickness increased from 10 to 50 nm. In particular, the TiO2/Ag/TiO2 (40 nm/18.8 nm/40 nm) multilayer film exhibited a transmittance of similar to 95% at 550 nm. Incrementally increasing the TiO2 thickness to 50 nm gradually decreased the carrier concentration to 6.1 x 10(21) cm(-3), while the charge mobility varied from 22.3 to 20.4 cm(2) V-1 s(-1). In addition, when increasing the TiO2 thickness to 50 rim, the samples showed similar sheet resistances of 3.9-4.4 Omega/(square), but the resistivity increased by a factor of 3.8. Haacke's figure of merit (EOM) was calculated for the samples and plotted as a function of TiO2 thickness; the TiO2 (40 nm)/Ag (18.8 nm)/TiO2 (40 nm) multilayer yielded the highest FOM of 159.9 x 10(-3) Omega(-1). (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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SEONG, TAE YEON
공과대학 (신소재공학부)
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