Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode
DC Field | Value | Language |
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dc.contributor.author | Han, Jaecheon | - |
dc.contributor.author | Lee, Daehee | - |
dc.contributor.author | Jin, Boram | - |
dc.contributor.author | Jeong, Hwanhee | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T18:40:26Z | - |
dc.date.available | 2021-09-04T18:40:26Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94263 | - |
dc.description.abstract | The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000 x 1000 mu m(2)) and large (1450 x 1450 mu m(2)) VLEDs, the forward bias voltages are decreased from 322 to 3.12 V at 350 mA and from 3.44 to 3.16 Vat 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 degrees C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 degrees C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes. (C) 2014 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | FABRICATION | - |
dc.title | Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.mssp.2014.11.038 | - |
dc.identifier.scopusid | 2-s2.0-84916887447 | - |
dc.identifier.wosid | 000350513500021 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.31, pp.153 - 159 | - |
dc.relation.isPartOf | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 31 | - |
dc.citation.startPage | 153 | - |
dc.citation.endPage | 159 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Vertical LED | - |
dc.subject.keywordAuthor | Via hole | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Ohmic contact | - |
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