A 0.15 V Input Energy Harvesting Charge Pump With Dynamic Body Biasing and Adaptive Dead-Time for Efficiency Improvement
DC Field | Value | Language |
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dc.contributor.author | Kim, Jungmoon | - |
dc.contributor.author | Mok, Philip K. T. | - |
dc.contributor.author | Kim, Chulwoo | - |
dc.date.accessioned | 2021-09-04T19:28:20Z | - |
dc.date.available | 2021-09-04T19:28:20Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94446 | - |
dc.description.abstract | A charge pump using 0.13-mu m CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages (V-IN). The AD circuit improves efficiency by 17% at V-IN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | BOOST CONVERTER | - |
dc.subject | CMOS | - |
dc.subject | GENERATION | - |
dc.subject | DESIGN | - |
dc.subject | LIMIT | - |
dc.title | A 0.15 V Input Energy Harvesting Charge Pump With Dynamic Body Biasing and Adaptive Dead-Time for Efficiency Improvement | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Chulwoo | - |
dc.identifier.doi | 10.1109/JSSC.2014.2375824 | - |
dc.identifier.scopusid | 2-s2.0-84956571731 | - |
dc.identifier.wosid | 000349231400002 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.50, no.2, pp.414 - 425 | - |
dc.relation.isPartOf | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 414 | - |
dc.citation.endPage | 425 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | BOOST CONVERTER | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | GENERATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | LIMIT | - |
dc.subject.keywordAuthor | Body biasing | - |
dc.subject.keywordAuthor | boost converter | - |
dc.subject.keywordAuthor | charge pump | - |
dc.subject.keywordAuthor | conversion efficiency | - |
dc.subject.keywordAuthor | dc-dc converter | - |
dc.subject.keywordAuthor | dead-time | - |
dc.subject.keywordAuthor | energy harvesting | - |
dc.subject.keywordAuthor | low voltage | - |
dc.subject.keywordAuthor | threshold voltage | - |
dc.subject.keywordAuthor | variation | - |
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