A 0.017 mu J/sample 313 K sample/sec clamped sensing-based time domain CMOS temperature sensor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Se-Chun | - |
dc.contributor.author | Choi, Sung-Dae | - |
dc.contributor.author | Hwang, Hyeonseok | - |
dc.contributor.author | Jo, Byeonghak | - |
dc.contributor.author | Park, Seung-Baek | - |
dc.contributor.author | Kim, Soo-Won | - |
dc.date.accessioned | 2021-09-05T00:48:10Z | - |
dc.date.available | 2021-09-05T00:48:10Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96147 | - |
dc.description.abstract | This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (T-PTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 mu J/sample at a conversion rate of 313 K sample/sec. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | A 0.017 mu J/sample 313 K sample/sec clamped sensing-based time domain CMOS temperature sensor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Soo-Won | - |
dc.identifier.doi | 10.1587/elex.12.20141133 | - |
dc.identifier.scopusid | 2-s2.0-84924311412 | - |
dc.identifier.wosid | 000352657900001 | - |
dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.12, no.5 | - |
dc.relation.isPartOf | IEICE ELECTRONICS EXPRESS | - |
dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | CMOS temperature sensor | - |
dc.subject.keywordAuthor | clamped sensing | - |
dc.subject.keywordAuthor | PTAT | - |
dc.subject.keywordAuthor | temperature coefficient | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.