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Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Chang-Soo | - |
| dc.contributor.author | Zhao, Yu | - |
| dc.contributor.author | Shon, Yoon | - |
| dc.contributor.author | Yoon, Im Taek | - |
| dc.contributor.author | Lee, Cheol Jin | - |
| dc.contributor.author | Song, Jin Dong | - |
| dc.contributor.author | Lee, Haigun | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.date.accessioned | 2021-09-05T01:20:21Z | - |
| dc.date.available | 2021-09-05T01:20:21Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2015 | - |
| dc.identifier.issn | 2050-7526 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96386 | - |
| dc.description.abstract | We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ROYAL SOC CHEMISTRY | - |
| dc.subject | GAS | - |
| dc.title | Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
| dc.contributor.affiliatedAuthor | Lee, Haigun | - |
| dc.identifier.doi | 10.1039/c5tc00051c | - |
| dc.identifier.scopusid | 2-s2.0-84928539911 | - |
| dc.identifier.wosid | 000353769300003 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.17, pp.4235 - 4238 | - |
| dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
| dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
| dc.citation.volume | 3 | - |
| dc.citation.number | 17 | - |
| dc.citation.startPage | 4235 | - |
| dc.citation.endPage | 4238 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | GAS | - |
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