Amorphous Oxide Semiconductor TFTs for Displays and Imaging
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nathan, Arokia | - |
dc.contributor.author | Lee, Sungsik | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Robertson, John | - |
dc.date.accessioned | 2021-09-05T03:19:21Z | - |
dc.date.available | 2021-09-05T03:19:21Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 1551-319X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96854 | - |
dc.description.abstract | This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM-TRANSISTOR | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | LOW-TEMPERATURE | - |
dc.subject | PERFORMANCE | - |
dc.subject | CRYSTALLINE | - |
dc.subject | PERCOLATION | - |
dc.title | Amorphous Oxide Semiconductor TFTs for Displays and Imaging | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1109/JDT.2013.2292580 | - |
dc.identifier.scopusid | 2-s2.0-84908274578 | - |
dc.identifier.wosid | 000344539800002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF DISPLAY TECHNOLOGY, v.10, no.11, pp.917 - 927 | - |
dc.relation.isPartOf | JOURNAL OF DISPLAY TECHNOLOGY | - |
dc.citation.title | JOURNAL OF DISPLAY TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 917 | - |
dc.citation.endPage | 927 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM-TRANSISTOR | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CRYSTALLINE | - |
dc.subject.keywordPlus | PERCOLATION | - |
dc.subject.keywordAuthor | Oxygen vacancies | - |
dc.subject.keywordAuthor | persistent photoconductivity | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordAuthor | transparent oxide semiconductors | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.