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Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN
- Authors
- Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon
- Issue Date
- 11월-2014
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Semi-polar GaN; Ohmic contact; Light-emitting diode; Zn/Ag
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.75, pp.962 - 967
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 75
- Start Page
- 962
- End Page
- 967
- ISSN
- 0749-6036
- Abstract
- Low-resistance Ag ohmic contacts to semi-polar (11-22) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 degrees C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 x 10(-4) Omega cm(2) better than that of Ag-only contacts (1.0 x 10(-3) Omega cm(2)). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed. (C) 2014 Elsevier Ltd. All rights reserved.
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