Nonvolatile Resistance Switching on Two-Dimensional Electron Gas
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Joung, Jin Gwan | - |
dc.contributor.author | Kim, Shin-Ik | - |
dc.contributor.author | Moon, Seon Young | - |
dc.contributor.author | Kim, Dai-Hong | - |
dc.contributor.author | Gwon, Hyo Jin | - |
dc.contributor.author | Hong, Seong-Hyeon | - |
dc.contributor.author | Chang, Hye Jung | - |
dc.contributor.author | Hwang, Jin-Ha | - |
dc.contributor.author | Kwon, Beom Jin | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.contributor.author | Choi, Ji-Won | - |
dc.contributor.author | Yoon, Seok-Jin | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Yoo, Kwang Soo | - |
dc.contributor.author | Kim, Jin-Sang | - |
dc.contributor.author | Baek, Seung-Hyub | - |
dc.date.accessioned | 2021-09-05T03:54:59Z | - |
dc.date.available | 2021-09-05T03:54:59Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-10-22 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97061 | - |
dc.description.abstract | Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10(6)) and a low leakage current at the OFF state (similar to 10(-13) A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | OXIDE | - |
dc.subject | INTERFACES | - |
dc.subject | MEMORIES | - |
dc.subject | SUPERCONDUCTIVITY | - |
dc.subject | NANOCROSSBAR | - |
dc.subject | ENHANCEMENT | - |
dc.subject | COEXISTENCE | - |
dc.subject | MECHANISMS | - |
dc.subject | DEPOSITION | - |
dc.subject | RERAM | - |
dc.title | Nonvolatile Resistance Switching on Two-Dimensional Electron Gas | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Chong-Yun | - |
dc.identifier.doi | 10.1021/am504354c | - |
dc.identifier.scopusid | 2-s2.0-84908192052 | - |
dc.identifier.wosid | 000343684200055 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.20, pp.17785 - 17791 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 17785 | - |
dc.citation.endPage | 17791 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | NANOCROSSBAR | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | COEXISTENCE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | RERAM | - |
dc.subject.keywordAuthor | two dimensional electron gas | - |
dc.subject.keywordAuthor | complex oxide | - |
dc.subject.keywordAuthor | heterointerface | - |
dc.subject.keywordAuthor | resistance switching | - |
dc.subject.keywordAuthor | nanovoltatile memory | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.