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A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Joon-Young | - |
| dc.contributor.author | Jung, Sung-Hoon | - |
| dc.contributor.author | Woo, Chang-Seung | - |
| dc.contributor.author | Lee, Ju-Hyun | - |
| dc.contributor.author | Park, Jung-Ho | - |
| dc.contributor.author | Jun, Myung-Chul | - |
| dc.contributor.author | Kang, In-Byeong | - |
| dc.contributor.author | Yeo, Sang-Deog | - |
| dc.date.accessioned | 2021-09-05T04:58:08Z | - |
| dc.date.available | 2021-09-05T04:58:08Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2014-10 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97359 | - |
| dc.description.abstract | We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under 5 mu m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4-mu m channel length TFT was 10.4 cm(2)/V.s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | THIN-FILM TRANSISTORS | - |
| dc.title | A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, Jung-Ho | - |
| dc.identifier.doi | 10.1109/LED.2014.2349902 | - |
| dc.identifier.scopusid | 2-s2.0-84907674278 | - |
| dc.identifier.wosid | 000343011300023 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1043 - 1045 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 35 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 1043 | - |
| dc.citation.endPage | 1045 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordAuthor | a-IGZO | - |
| dc.subject.keywordAuthor | AMOLED | - |
| dc.subject.keywordAuthor | etch-stopper | - |
| dc.subject.keywordAuthor | LCD | - |
| dc.subject.keywordAuthor | oxide semiconductor | - |
| dc.subject.keywordAuthor | short channel | - |
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