Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Yun-Suk | - |
dc.contributor.author | Um, Doo-Seung | - |
dc.contributor.author | Lee, Youngsu | - |
dc.contributor.author | Shin, JaeKyun | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.contributor.author | Koo, Hyun Cheol | - |
dc.contributor.author | Ko, Hyunhyub | - |
dc.contributor.author | Kim, Hyung-jun | - |
dc.date.accessioned | 2021-09-05T05:50:43Z | - |
dc.date.available | 2021-09-05T05:50:43Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97588 | - |
dc.description.abstract | We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally. grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19 ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300 K without mixing with anisotropic magnetoresistance, which is evidently verified by observing a memory effect. (C) 2014 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | SILICON | - |
dc.subject | ACCUMULATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | PRECESSION | - |
dc.subject | TRANSPORT | - |
dc.subject | LAYERS | - |
dc.title | Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
dc.identifier.doi | 10.7567/APEX.7.093004 | - |
dc.identifier.scopusid | 2-s2.0-84907022302 | - |
dc.identifier.wosid | 000342863500020 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.7, no.9 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ACCUMULATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PRECESSION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | LAYERS | - |
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