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Properties of boron-rich layer formed by boron diffusion in n-type silicon
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Chanseok | - |
| dc.contributor.author | Park, Sungeun | - |
| dc.contributor.author | Do Kim, Young | - |
| dc.contributor.author | Park, Hyomin | - |
| dc.contributor.author | Kim, Seongtak | - |
| dc.contributor.author | Kim, Hyunho | - |
| dc.contributor.author | Lee, Hae-seok | - |
| dc.contributor.author | Kim, Donghwan | - |
| dc.date.accessioned | 2021-09-05T06:13:53Z | - |
| dc.date.available | 2021-09-05T06:13:53Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2014-08-01 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97720 | - |
| dc.description.abstract | A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 degrees C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 10(23) atoms/cm(3). BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 15-2.0, and the contact resistance of 0.8 m Omega cm(2). (C) 2014 Published by Elsevier B.V. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.title | Properties of boron-rich layer formed by boron diffusion in n-type silicon | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lee, Hae-seok | - |
| dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
| dc.identifier.doi | 10.1016/j.tsf.2014.05.038 | - |
| dc.identifier.scopusid | 2-s2.0-84904042327 | - |
| dc.identifier.wosid | 000340852200034 | - |
| dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.564, pp.253 - 257 | - |
| dc.relation.isPartOf | THIN SOLID FILMS | - |
| dc.citation.title | THIN SOLID FILMS | - |
| dc.citation.volume | 564 | - |
| dc.citation.startPage | 253 | - |
| dc.citation.endPage | 257 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordAuthor | n-Type silicon | - |
| dc.subject.keywordAuthor | Boron emitter | - |
| dc.subject.keywordAuthor | Boron-rich layer | - |
| dc.subject.keywordAuthor | Material property | - |
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