Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene
DC Field | Value | Language |
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dc.contributor.author | Park, Chang-Soo | - |
dc.contributor.author | Zhao, Yu | - |
dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Lee, Haigun | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.date.accessioned | 2021-09-05T06:15:49Z | - |
dc.date.available | 2021-09-05T06:15:49Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97734 | - |
dc.description.abstract | We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | RESISTIVITY | - |
dc.subject | PHASE | - |
dc.subject | FILMS | - |
dc.subject | GAS | - |
dc.title | Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Haigun | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.1063/1.4893240 | - |
dc.identifier.scopusid | 2-s2.0-84940255367 | - |
dc.identifier.wosid | 000342808900020 | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.4, no.8 | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 4 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GAS | - |
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