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Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass
- Authors
- Hong, Chan-Hwa; Shin, Jae-Heon; Park, Nae-Man; Kim, Kyung-Hyun; Kim, Bo-Sul; Kwak, Joon-Seop; Ju, Byeong-Kwon; Cheong, Woo-Seok
- Issue Date
- 8월-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8
- Indexed
- SCIE
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 53
- Number
- 8
- ISSN
- 0021-4922
- Abstract
- We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after high-temperature anneal process (> 200 degrees C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120 Omega/sq and optical transmittance higher than 90% (at 550 nm) has been achieved. (C) 2014 The Japan Society of Applied Physics
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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