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Fabrication of Stretchable Single-Walled Carbon Nanotube Logic Devices

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dc.contributor.authorYoon, Jangyeol-
dc.contributor.authorShin, Gunchul-
dc.contributor.authorKim, Joonsung-
dc.contributor.authorMoon, Young Sun-
dc.contributor.authorLee, Seung-Jung-
dc.contributor.authorZi, Goangseup-
dc.contributor.authorHa, Jeong Sook-
dc.date.accessioned2021-09-05T06:51:10Z-
dc.date.available2021-09-05T06:51:10Z-
dc.date.created2021-06-15-
dc.date.issued2014-07-23-
dc.identifier.issn1613-6810-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/97939-
dc.description.abstractThe fabrication of a stretchable single-walled carbon nanotube (SWCNT) complementary metal oxide semiconductor (CMOS) inverter array and ring oscillators is reported. The SWCNT CMOS inverter exhibits static voltage transfer characteristics with a maximum gain of 8.9 at a supply voltage of 5 V. The fabricated devices show stable electrical performance under the maximum strain of 30% via forming wavy configurations. In addition, the 3-stage ring oscillator demonstrates a stable oscillator frequency of similar to 3.5 kHz at a supply voltage of 10 V and the oscillating waveforms are maintained without any distortion under cycles of pre-strain and release. The strains applied to the device upon deformation are also analyzed by using the classical lamination theory, estimating the local strain of less than 0.6% in the SWCNT channel and Pd electrode regions which is small enough to keep the device performance stable under the pre-strain up to 30%. This work demonstrates the potential application of stretchable SWCNT logic circuit devices in future wearable electronics.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectSILICON INTEGRATED-CIRCUITS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectHIGH AREAL COVERAGE-
dc.subjectELECTRONICS-
dc.subjectTRANSPARENT-
dc.subjectNANOWIRES-
dc.subjectDESIGNS-
dc.subjectSUBSTRATE-
dc.subjectPRESSURE-
dc.titleFabrication of Stretchable Single-Walled Carbon Nanotube Logic Devices-
dc.typeArticle-
dc.contributor.affiliatedAuthorZi, Goangseup-
dc.contributor.affiliatedAuthorHa, Jeong Sook-
dc.identifier.doi10.1002/smll.201303779-
dc.identifier.scopusid2-s2.0-84904437987-
dc.identifier.wosid000340660900023-
dc.identifier.bibliographicCitationSMALL, v.10, no.14, pp.2910 - 2917-
dc.relation.isPartOfSMALL-
dc.citation.titleSMALL-
dc.citation.volume10-
dc.citation.number14-
dc.citation.startPage2910-
dc.citation.endPage2917-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusSILICON INTEGRATED-CIRCUITS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH AREAL COVERAGE-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusDESIGNS-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusPRESSURE-
dc.subject.keywordAuthorlogic device-
dc.subject.keywordAuthorstretchable-
dc.subject.keywordAuthorSWCNT-
dc.subject.keywordAuthorwavy configuration-
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