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Field emission behavior of carbon nanotube field emitters after high temperature thermal annealing

Authors
Sun, YuningShin, Dong HoonYun, Ki NamHwang, Yeon MoSong, YenanLeti, GuillaumeJeon, Seok-GyKim, Jung-IlSaito, YahachiLee, Cheol Jin
Issue Date
7월-2014
Publisher
AMER INST PHYSICS
Citation
AIP ADVANCES, v.4, no.7
Indexed
SCIE
SCOPUS
Journal Title
AIP ADVANCES
Volume
4
Number
7
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/98080
DOI
10.1063/1.4889896
ISSN
2158-3226
Abstract
The carbon nanotube (CNT) field emitters have been fabricated by attaching a CNT film on a graphite rod using graphite adhesive material. The CNT field emitters showed much improved field emission properties due to increasing crystallinity and decreasing defects in CNTs after the high temperature thermal annealing at 900 degrees C in vacuum ambient. The CNT field emitters showed the low turn-on electric field of 1.15 V/mu m, the low threshold electric field of 1.62 V/mu m, and the high emission current of 5.9 mA which corresponds to a current density of 8.5 A/cm(2). In addition, the CNT field emitters indicated the enhanced field emission properties due to the multi-stage effect when the length of the graphite rod increases. The CNT field emitter showed good field emission stability after the high temperature thermal annealing. The CNT field emitter revealed a focused electron beam spot without any focusing electrodes and also showed good field emission repeatability. (C) 2014 Author(s).
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