Catalytic Transparency of Hexagonal Boron Nitride on Copper for Chemical Vapor Deposition Growth of Large-Area and High-Quality Graphene
- Authors
- Wang, Min; Kim, Minwoo; Odkhuu, Dorj; Park, Noejung; Lee, Joohyun; Jang, Won-Jun; Kahng, Se-Jong; Ruoff, Rodney S.; Song, Young Jae; Lee, Sungjoo
- Issue Date
- 6월-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- graphene; h-BN; direct CVD growth; CVD growth mechanism; catalytic transparency; ideal CVD template
- Citation
- ACS NANO, v.8, no.6, pp.5478 - 5483
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 8
- Number
- 6
- Start Page
- 5478
- End Page
- 5483
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98392
- DOI
- 10.1021/nn501837c
- ISSN
- 1936-0851
- Abstract
- Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such material can be grown on thin h-BN films that are less than 3 nm thick, as confirmed by optical microscopy and Raman spectroscopy. We have evaluated the catalytic growth mechanism and the limits on the CVD growth of high-quality and large-area graphene on h-BN film/Cu by performing Kelvin probe force microscopy and DFT calculations for various thicknesses of h-BN.
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