Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors
- Authors
- Thakur, Bikash; Lee, Sungsik; Ahnood, Arman; Jeon, Sanghun; Sambandan, Sanjiv; Nathan, Arokia
- Issue Date
- 19-5월-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.20
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 20
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98502
- DOI
- 10.1063/1.4879554
- ISSN
- 0003-6951
- Abstract
- Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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