Mechanism underlying the beneficial effect of forming gas annealing on screen-printed Ag contacts of crystalline Si solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Sung-Bin | - |
dc.contributor.author | Kim, Hee-Soo | - |
dc.contributor.author | Huh, Joo-Youl | - |
dc.date.accessioned | 2021-09-05T08:47:53Z | - |
dc.date.available | 2021-09-05T08:47:53Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-05-15 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98513 | - |
dc.description.abstract | Forming gas annealing (FGA) has been known to be beneficial for improving the contact resistance of crystalline Si (c-Si) solar cells containing overfired front-side Ag contacts. This study examines the microstructural changes responsible for the beneficial effect of FGA through the use of ultrahigh-resolution scanning electron microscopy. The FGA process at 400 C under N-2 + 10% H-2 led to the formation of a layer of fine (<300 nm) Ag particles on the glass surface of the interfacial pores, which were connected to the open channels in the porously sintered Ag bulk. Aside from the pore surfaces, FGA had little influence on the contact microstructure, and there was no noticeable formation of Ag or other metallic particles within the interfacial glass layer. The present results demonstrate that the Ag+ ions dissolved into the lead borosilicate glass during the firing process, and subsequently diffused out only to be reduced in the vicinity of the pore surfaces during FGA. This result suggests that the permeation rate of hydrogen into the lead borosilicate glass should be negligible, compared to the out-diffusion rate of the Ag+ ions during FGA. Furthermore, the conductivity measurements indicated that the pore surfaces that were decorated with a dense layer of fine Ag particles after FGA could act as an additional path for current transport across the contact interface, thereby lowering the contact resistance. (c) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | THICK-FILM CONTACTS | - |
dc.subject | N-TYPE SILICON | - |
dc.subject | GLASS FRIT | - |
dc.subject | SURFACE CONDUCTIVITY | - |
dc.subject | EFFICIENCY | - |
dc.subject | EMITTERS | - |
dc.subject | OXYGEN | - |
dc.title | Mechanism underlying the beneficial effect of forming gas annealing on screen-printed Ag contacts of crystalline Si solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Huh, Joo-Youl | - |
dc.identifier.doi | 10.1016/j.actamat.2014.02.023 | - |
dc.identifier.scopusid | 2-s2.0-84895775271 | - |
dc.identifier.wosid | 000335636500001 | - |
dc.identifier.bibliographicCitation | ACTA MATERIALIA, v.70, pp.1 - 7 | - |
dc.relation.isPartOf | ACTA MATERIALIA | - |
dc.citation.title | ACTA MATERIALIA | - |
dc.citation.volume | 70 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | THICK-FILM CONTACTS | - |
dc.subject.keywordPlus | N-TYPE SILICON | - |
dc.subject.keywordPlus | GLASS FRIT | - |
dc.subject.keywordPlus | SURFACE CONDUCTIVITY | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | EMITTERS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordAuthor | Crystalline Si solar cell | - |
dc.subject.keywordAuthor | Screen-printed Ag contact | - |
dc.subject.keywordAuthor | Forming gas annealing | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Microstructure | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.